REFLECTION MASS-SPECTROMETRY OF AS INCORPORATION DURING GAAS MOLECULAR-BEAM EPITAXY

被引:38
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TSAO, JY
BRENNAN, TM
HAMMONS, BE
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10.1063/1.99916
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O59 [应用物理学];
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页码:288 / 290
页数:3
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共 14 条
[1]   SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J].
ARTHUR, JR .
SURFACE SCIENCE, 1974, 43 (02) :449-461
[2]   OPTICAL-REFLECTANCE AND ELECTRON-DIFFRACTION STUDIES OF MOLECULAR-BEAM-EPITAXY GROWTH TRANSIENTS ON GAAS(001) [J].
ASPNES, DE ;
HARBISON, JP ;
STUDNA, AA ;
FLOREZ, LT .
PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1687-1690
[4]  
Davies G. J., 1985, TECHNOLOGY PHYSICS M, P38
[5]   COMPOSITION AND STRUCTURE OF DIFFERENTLY PREPARED GAAS(100) SURFACES STUDIED BY LEED AND AES [J].
DRATHEN, P ;
RANKE, W ;
JACOBI, K .
SURFACE SCIENCE, 1978, 77 (01) :L162-L166
[6]   INCORPORATION RATES OF GALLIUM AND ALUMINUM ON GAAS DURING MOLECULAR-BEAM EPITAXY AT HIGH SUBSTRATE TEMPERATURES [J].
FISCHER, R ;
KLEM, J ;
DRUMMOND, TJ ;
THORNE, RE ;
KOPP, W ;
MORKOC, H ;
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2508-2510
[7]   OBSERVATIONS ON BAYARD-ALPERT ION GAUGE SENSITIVITIES TO VARIOUS GASES [J].
FLAIM, TA ;
OWNBY, PD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (05) :661-&
[8]   EVAPORATION OF GAAS UNDER EQUILIBRIUM AND NONEQUILIBRIUM CONDITIONS USING A MODULATED BEAM TECHNIQUE [J].
FOXON, CT ;
HARVEY, JA ;
JOYCE, BA .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (10) :1693-&
[9]   INTERACTION KINETICS OF AS4 AND GA ON [100] GAAS SURFACES USING A MODULATED MOLECULAR-BEAM TECHNIQUE [J].
FOXON, CT ;
JOYCE, BA .
SURFACE SCIENCE, 1975, 50 (02) :434-450
[10]  
FOXON CT, 1981, CURRENT TOPICS MATER, V7, pCH1