STUDIES ON THE N-GAAS PHOTOANODE IN AQUEOUS-ELECTROLYTES .2. DIFFERENTIAL CAPACITANCE BEHAVIOR

被引：34

作者：

VANMAEKELBERGH, D ^{[1
]}

GOMES, WP ^{[1
]}

机构：

[1] STATE UNIV GHENT,KRISTALLOG & STUDIE VAN DE VASTE STOF LAB,B-9000 GHENT,BELGIUM

来源：

BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 1985年 / 89卷 / 09期

关键词：

D O I：

10.1002/bbpc.19850890913

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：994 / 998

页数：5

共 12 条

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[7] ROLE OF DECOMPOSITION-INDUCED AND OTHER SURFACE-STATES IN THE PHOTOELECTROCHEMICAL KINETICS OF N-GAP/FE2+ [J].

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[8] STUDY OF STABILIZATION AND SURFACE RECOMBINATION ON N-GAP PHOTO-ELECTRODES - MECHANISMS AND INTERRELATION [J].

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[9] STUDIES ON THE N-GAAS PHOTOANODE IN AQUEOUS-ELECTROLYTES .1. BEHAVIOR OF THE PHOTOCURRENT IN THE PRESENCE OF A STABILIZING AGENT [J].

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BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1985, 89 (09) :987-994

[10] RELATIONSHIP BETWEEN STABILIZATION AND PHOTOCURRENT AT N-TYPE SEMICONDUCTOR ELECTRODES ON THE BASIS OF A MODEL INCLUDING SURFACE RECOMBINATION THROUGH DECOMPOSITION INTERMEDIATES [J].

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JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS I, 1983, 79 :1391-1401

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