THE REACTION-KINETICS OF IRON-BORON PAIR FORMATION AND DISSOCIATION IN P-TYPE SILICON

被引:50
作者
WIJARANAKULA, W
机构
[1] Research and Development Department, SEH America Incorporated, Vancouver
关键词
D O I
10.1149/1.2056102
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The reaction kinetics of iron-boron formation and dissociation in p-type silicon were investigated. The results indicate that the reaction kinetics depend strongly on the relative position of the ionization energy of interstitial iron and the Fermi level. At temperatures below a transition temperature where the ionization energy of interstitial iron is equal to the Fermi level, the iron-boron pairing reaction is dominated by the electrostatically enhanced recombination process between interstitial iron and substitutional boron. This pairing reaction is limited to the iron diffusion which may be described by the diffusion coefficient correlated by Weber.8 At temperatures above the transition temperature, the concentrations of ionized and neutrally charged interstitial iron species are in equilibrium. The equilibrium reaction, which is facilitated by thermally excited electrons, gives rise to a deionization of the charged interstitial iron species and in turn causes the dissociation of the iron-boron pairs.
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页码:275 / 281
页数:7
相关论文
共 23 条
[1]  
Gao X., UNPUB
[2]   THE PROPERTIES OF IRON IN SILICON [J].
GRAFF, K ;
PIEPER, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) :669-674
[3]  
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[4]   HOW FAR DOES THE CHARGE STATE AFFECT THE IRON BEHAVIOR IN SILICON [J].
HEISER, T ;
MESLI, A .
APPLIED PHYSICS LETTERS, 1991, 58 (20) :2240-2242
[5]   EFFECTS OF HEAT-TREATMENTS ON ELECTRICAL-PROPERTIES OF BORON-DOPED SILICON-CRYSTALS [J].
KAMIURA, Y ;
HASHIMOTO, F ;
YONETA, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (11) :3642-3647
[6]   ELECTRONICALLY CONTROLLED REACTIONS OF INTERSTITIAL IRON IN SILICON [J].
KIMERLING, LC ;
BENTON, JL .
PHYSICA B & C, 1983, 116 (1-3) :297-300
[7]  
KIMERLING LC, 1981, I PHYS C SER, V59, P217
[8]  
Kittel C., 1960, INTRO SOLID STATE PH
[9]  
LEE YH, 1977, APPL PHYS LETT, V31, P142, DOI 10.1063/1.89630
[10]  
LUDWIG GW, 1962, SOLID STATE PHYS, V13, P223