AL AND B ION-IMPLANTATIONS IN 6H-SIC AND 3C-SIC

Low (keV) and high (MeV) energy Al and B implants were performed into n-type 6H- and 3C-SiC at both room temperature and 850°C. The material was annealed at 1100, 1200, or 1400°C for 10 min and characterized by secondary ion mass spectrometry, Rutherford backscattering (RBS), photoluminescence, Hall and capacitance-voltage measurement techniques. For both Al and B implants, the implant species was gettered at 0.7 Rp (where Rp is the projected range) in samples implanted at 850°C and annealed at 1400°C. In the samples that were amorphized by the room temperature implantation, a distinct damage peak remained in the RBS spectrum even after 1400°C annealing. For the samples implanted at 850°C, which were not amorphized, the damage peak disappeared after 1400°C annealing. P-type conduction is observed only in samples implanted by Al at 850°C and annealed at 1400°C in Ar, with 1% dopant electrical activation. © 1995 American Institute of Physics.