CHARACTERIZATION OF PBTIO3 THIN-FILMS DEPOSITED ON PT/TI/SIO2/SI SUBSTRATES BY ECR PECVD

被引：14

作者：

CHUNG, SW ^{[1
]}

SHIN, JS ^{[1
]}

KIM, JW ^{[1
]}

NO, K ^{[1
]}

CHUN, SS ^{[1
]}

LEE, WJ ^{[1
]}

机构：

[1] KOREA ADV INST SCI & TECHNOL,DEPT CERAM SCI & ENGN,TAEJON 305701,SOUTH KOREA

来源：

JOURNAL OF MATERIALS RESEARCH | 1995年 / 10卷 / 02期

关键词：

D O I：

10.1557/JMR.1995.0447

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR PECVD) method is used to prepare ferroelectric PbTiO3 films. Single-phase perovskite PbTiO3 films with smooth surfaces and fine grain size were successfully fabricated on Pt/Ti/SiO2/Si substrates at low temperatures of 400-500 degrees C using metal-organic (MO) sources. The chemical compositions, structural phases, surface morphologies, and depth profiles of the PbTiO3 thin films were investigated using EDS, XRD, SEM, RBS, and AES. Variations of those properties with process temperature and gas supply ratio are discussed. When the process temperature was above 450 degrees C, the stoichiometric perovskite PbTiO3 films could be obtained even though the MO source supply ratio was varied in a wide range if the oxygen supply was sufficient.

引用

页码：447 / 452

页数：6

共 14 条

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