THE NEGATIVELY CHARGED VACANCY IN SILICON - HYPERFINE INTERACTIONS FROM ENDOR MEASUREMENTS

被引：19

作者：

SPRENGER, M

MULLER, SH

AMMERLAAN, CAJ

机构：

来源：

PHYSICA B & C | 1983年 / 116卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(83)90251-6

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：224 / 229

页数：6

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SIEVERTS, EG .

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[6]

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[7]

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[8]

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[9] NEGATIVE-U PROPERTIES FOR POINT-DEFECTS IN SILICON [J].

WATKINS, GD ;

TROXELL, JR .

[10]

WATKINS GD, 1981, I PHYS C SER, V59, P199