STOICHIOMETRY CHANGES IN III-V COMPOUNDS UNDER ION-BOMBARDMENT

被引：5

作者：

BARCZ, A ^{[1
]}

BUGAJSKI, M ^{[1
]}

CROSET, M ^{[1
]}

MERCANDALLI, LM ^{[1
]}

机构：

[1] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期

关键词：

Argon; -; Nitrogen; Oxygen; Sputtering;

D O I：

10.1016/0167-5087(83)90858-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

GaAs and GaP single crystalline samples were implanted/sputtered with N, O, Ar and Te ions to doses greater than 10**1**7 cm** minus **2 at energies corresponding to several hundred angstroms of projected range. Depth distributions of the implanted atoms along with those of both constituents of the substrate were measured by the combined low-and-high-energy backscattering techniques. Residual damage within and beneath the irradiated region was examined by the use of photoluminescence spectroscopy. Results are discussed.

引用

页码：621 / 627

页数：7

共 23 条

[1] QUANTITATIVITY IN III-V COMPOUNDS BY LOW-ENERGY ION-SCATTERING SPECTROMETRY (ISS) [J].