HOT-WALL EPITAXIAL-GROWTH OF ZNSE ON S-PASSIVATED GAAS (100) SUBSTRATE

被引：2

作者：

CAI, WZ

LI, ZS

DING, XM

HOU, XY

WANG, J

ZHU, CS

SU, RZ

WANG, X

机构：

[1] NE FOREST UNIV,DEPT PHYS,HEI LONG JIANG,PEOPLES R CHINA

[2] FUDAN UNIV,FUDAN TD LEE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 142卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(94)90352-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A new sulfur passivation technique for GaAs surface by using S2Cl2 has been developed as the substrate treatment method in heteroepitaxial growth of ZnSe films. A clean surface can be achieved by annealing the as-treated sample in vacuum at 600-degrees-C. ZnSe thin films grown by hot wall epitaxy on S2Cl2 passivated GaAs show improved crystalline quality compared with those treated by conventional method, as indicated by Raman scattering measurements.

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收藏

页码：397 / 399

页数：3

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