QUALITY OF ZNSE/GAAS EPILAYERS STUDIED BY SPATIAL CORRELATION MODEL OF RAMAN-SCATTERING

被引：16

作者：

WANG, J ^{[1
]}

YAO, WH ^{[1
]}

WANG, JB ^{[1
]}

LU, HQ ^{[1
]}

SUN, HH ^{[1
]}

WANG, X ^{[1
]}

PANG, ZL ^{[1
]}

机构：

[1] ACAD SINICA,SHANGHAI INST TECH PHYS,SHANGHAI 200433,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 22期

关键词：

D O I：

10.1063/1.109229

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, the spatial correlation model has been used for interpreting the line shapes of the first-order longitudinal-optical phonon Raman spectra of ZnSe/GaAs epitaxial layers. The good agreement between theoretical line shapes and the experiment measurements was illustrated for the samples grown by the molecular beam epitaxy (MBE), hot wall epitaxy (HWE), and hot wall beam epitaxy (HWBE).

引用

页码：2845 / 2847

页数：3

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