RAMAN-STUDY OF DISORDER AND STRAIN IN EPITAXIAL ZNSXSE1-X FILMS ON A GAAS SUBSTRATE

被引：15

作者：

KANEMITSU, Y ^{[1
]}

YAMAMOTO, A ^{[1
]}

MATSUE, H ^{[1
]}

MASUMOTO, Y ^{[1
]}

YAMAGA, S ^{[1
]}

YOSHIKAWA, A ^{[1
]}

机构：

[1] CHIBA UNIV,DEPT ELECT & ELECTR ENGN,CHIBA 260,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 11期

关键词：

D O I：

10.1063/1.107333

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Quantitative characterization of disorder and strain in ZnSxSe1-x/GaAs lattice-mismatched semiconductor heterostructures was successfully done by means of Raman spectroscopy. The alloy disorder and the phonon coherence length in epitaxial ZnSxSe1-x films were estimated from the Raman linewidth of the ZnSe-like LO phonon by using a spatial correlation model. The strain due to the lattice mismatch near the interface between ZnSxSe1-x and GaAs was deduced from the linewidth of the GaAs LO phonon.

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页码：1330 / 1332

页数：3

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