PHONON STUDY OF STRAINED INGAAS LAYERS

被引：18

作者：

BRAFMAN, O ^{[1
]}

FEKETE, D ^{[1
]}

SARFATY, R ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 04期

关键词：

D O I：

10.1063/1.104647

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Relaxation of strain in In(x)Ga(l)-xAs layers on GaAs is studied by Raman spectroscopy for layers below and above the critical thickness. We show that the enormous strain of the perfect epitaxial layer is released stepwise with the thickness. It is suggested that dislocations formed at the layer surface impose the growth of the next sublayer of partially released strain, preserving the former grown sublayer of higher strain.

引用

页码：400 / 402

页数：3

共 12 条

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