RAMAN-STUDY OF AN EPITAXIAL GAAS LAYER ON A SI[100] SUBSTRATE

被引：58

作者：

HUANG, YH

YU, PY

CHARASSE, MN

LO, YH

WANG, S

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & CHEM SCI,BERKELEY,CA 94720

[3] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 03期

关键词：

D O I：

10.1063/1.98919

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：192 / 194

页数：3

共 15 条

[1] RAMAN-SPECTROSCOPY OF INTRINSIC DEFECTS IN ELECTRON AND NEUTRON-IRRADIATED GAAS
BERG, RS
YU, PY
WEBER, ER
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (05) : 515 - 517
[2] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS
CERDEIRA, F
BUCHENAUER, CJ
CARDONA, M
POLLAK, FH
[J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 580 - +
[3] OBSERVATIONS OF PHONON LINE BROADENING IN III-V SEMICONDUCTORS BY SURFACE REFLECTION RAMAN-SCATTERING
EVANS, DJ
USHIODA, S
[J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1638 - 1645
[4] MATERIAL PROPERTIES OF HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN ON SI SUBSTRATES
FISCHER, R
MORKOC, H
NEUMANN, DA
ZABEL, H
CHOI, C
OTSUKA, N
LONGERBONE, M
ERICKSON, LP
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1640 - 1647
[5] GAAS BIPOLAR-TRANSISTORS GROWN ON (100) SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
FISCHER, R
CHAND, N
KOPP, W
MORKOC, H
ERICKSON, LP
YOUNGMAN, R
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (04) : 397 - 399
[6] A DC AND MICROWAVE COMPARISON OF GAAS-MESFETS ON GAAS AND SI SUBSTRATES
FISCHER, RJ
CHAND, N
KOPP, WF
PENG, CK
MORKOC, H
GLEASON, KR
SCHEITLIN, D
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (02) : 206 - 213
[7] STUDY OF ION-IMPLANTATION DAMAGE IN GAAS-BE AND INP-BE USING RAMAN-SCATTERING
RAO, CSR
SUNDARAM, S
SCHMIDT, RL
COMAS, J
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 1808 - 1815
[8] THE ONE PHONON RAMAN-SPECTRUM IN MICROCRYSTALLINE SILICON
RICHTER, H
WANG, ZP
LEY, L
[J]. SOLID STATE COMMUNICATIONS, 1981, 39 (05) : 625 - 629
[9] SERAPHIN BO, 1967, SEMICONDUCT SEMIMET, V3, P513
[10] RAMAN-STUDY OF POLISH-INDUCED SURFACE STRAIN IN [100] GAAS AND INP
SHEN, H
POLLAK, FH
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (06) : 692 - 694

← 1 2 →