RAMAN-STUDY OF AN EPITAXIAL GAAS LAYER ON A SI[100] SUBSTRATE

被引：58

作者：

HUANG, YH

YU, PY

CHARASSE, MN

LO, YH

WANG, S

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & CHEM SCI,BERKELEY,CA 94720

[3] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 03期

关键词：

D O I：

10.1063/1.98919

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：192 / 194

页数：3

相关论文

共 15 条

[11] EFFECTS OF AS+ ION-IMPLANTATION ON THE RAMAN-SPECTRA OF GAAS - SPATIAL CORRELATION INTERPRETATION
TIONG, KK
AMIRTHARAJ, PM
POLLAK, FH
ASPNES, DE
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 122 - 124
[12] DEPENDENCE OF THE PHONON-SPECTRUM OF INP ON HYDROSTATIC-PRESSURE
TROMMER, R
MULLER, H
CARDONA, M
VOGL, P
[J]. PHYSICAL REVIEW B, 1980, 21 (10): : 4869 - 4878
[13] RAMAN-SPECTROSCOPY OF REACTIVE ION ETCHING INDUCED SUBSURFACE DAMAGE
TSANG, JC
OEHRLEIN, GS
HALLER, I
CUSTER, JS
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (06) : 589 - 591
[14] LOW THRESHOLD, OPTICALLY PUMPED, ROOM-TEMPERATURE LASER OSCILLATION AT 0.88 MU-M FROM ALGAAS/GAAS DOUBLE HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON GE-COATED SI SUBSTRATES
VANDERZIEL, JP
DUPUIS, RD
BEAN, JC
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (25) : 1713 - 1715
[15] EFFECT OF UNIAXIAL STRESS ON RESTSTRAHLEN SPECTRUM OF GAAS
WEINSTEI.BA
CARDONA, M
[J]. PHYSICAL REVIEW B, 1972, 5 (08): : 3120 - &