ORGANOMETALLIC VAPOR-PHASE EPITAXY OF INP LAYERS USING THE NEW PRECURSOR METHYLCYCLOPENTADIENYLINDIUM

被引:16
作者
STARING, EGJ
MEEKES, GJBM
机构
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D O I
10.1021/ja00201a074
中图分类号
O6 [化学];
学科分类号
0703 ;
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页码:7648 / 7650
页数:3
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共 56 条
[1]   SIMS AND PHOTOLUMINESCENCE EVALUATION OF HIGH-PURITY INP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
AINA, O ;
MATTINGLY, M ;
STEINHAUSER, S ;
MARIELLA, R ;
MELAS, A .
JOURNAL OF CRYSTAL GROWTH, 1988, 92 (1-2) :215-221
[2]   MONONUCLEAR AND DINUCLEAR PHOSPHIDO AND ARSENIDO COMPLEXES OF GALLIUM - GA(EBU-TERT-2)3, GA[PH(2,4,6-BU-TERT-3C6H2)]3 AND [GA(MU-EBU-TERT-2)R2]2, (E = P, AS, R = ME, BUN) [J].
ARIF, AM ;
BENAC, BL ;
COWLEY, AH ;
GEERTS, R ;
JONES, RA ;
KIDD, KB ;
POWER, JM ;
SCHWAB, ST .
JOURNAL OF THE CHEMICAL SOCIETY-CHEMICAL COMMUNICATIONS, 1986, (20) :1543-1545
[3]  
AYLETT MR, 1983, J MAT RES SOC S P, V17, P177
[4]   METAL ORGANIC VAPOR-PHASE EPITAXY OF INDIUM-PHOSPHIDE [J].
BASS, SJ ;
PICKERING, C ;
YOUNG, ML .
JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) :68-75
[5]   MOCVD OF INDIUM-PHOSPHIDE AND INDIUM GALLIUM-ARSENIDE USING TRIMETHYLINDIUM-TRIMETHYLAMINE ADDUCTS [J].
BASS, SJ ;
SKOLNICK, MS ;
CHUDZYNSKA, H ;
SMITH, L .
JOURNAL OF CRYSTAL GROWTH, 1986, 75 (02) :221-226
[6]   TRIMETHYLGALLIUM .V. REACTIONS OF TRIMETHYL-ALUMINIUM -GALLIUM AND -INDIUM WITH SOME PRIMARY AND SECONDARY PHOSPHINES AND ARSINES [J].
BEACHLEY, OT ;
COATES, GE .
JOURNAL OF THE CHEMICAL SOCIETY, 1965, (MAY) :3241-&
[7]   SYNTHESIS, CHARACTERIZATION, AND STRUCTURAL STUDIES OF IN(C5H4ME) BY X-RAY-DIFFRACTION AND ELECTRON-DIFFRACTION TECHNIQUES AND A REINVESTIGATION OF THE CRYSTALLINE STATE OF IN(C5H5) BY X-RAY-DIFFRACTION STUDIES [J].
BEACHLEY, OT ;
PAZIK, JC ;
GLASSMAN, TE ;
CHURCHILL, MR ;
FETTINGER, JC ;
BLOM, R .
ORGANOMETALLICS, 1988, 7 (05) :1051-1059
[8]   SYNTHESIS AND CHARACTERIZATION OF AMPHOTERIC LIGANDS INCLUDING THE CRYSTAL AND MOLECULAR-STRUCTURE OF [(ME3SICH2)2INPPH2]2 [J].
BEACHLEY, OT ;
KOPASZ, JP ;
ZHANG, HM ;
HUNTER, WE ;
ATWOOD, JL .
JOURNAL OF ORGANOMETALLIC CHEMISTRY, 1987, 325 (1-2) :69-81
[9]   THE USE OF A METALORGANIC COMPOUND FOR THE GROWTH OF INP-EPITAXIAL LAYERS [J].
BENZ, KW ;
RENZ, H ;
WEIDLEIN, J ;
PILKUHN, MH .
JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) :185-192
[10]   THE VOLATILITIES OF SOME ADDUCTS OF TRIMETHYLINDIUM [J].
BRADLEY, DC ;
FAKTOR, MM ;
FRIGO, DM ;
SMITH, LM .
JOURNAL OF CRYSTAL GROWTH, 1988, 92 (1-2) :37-45