POSSIBLE LIFETIME-LIMITING DEFECT IN 6H SIC

被引：29

作者：

SON, NT ^{[1
]}

SORMAN, E ^{[1
]}

CHEN, WM ^{[1
]}

KORDINA, O ^{[1
]}

MONEMAR, B ^{[1
]}

JANZEN, E ^{[1
]}

机构：

[1] UNIV HANOI,DEPT PHYS,HANOI,VIETNAM

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 21期

关键词：

D O I：

10.1063/1.112962

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We reveal and investigate a possible lifetime-limiting defect in as-grown 6H SiC by optical detection of magnetic resonance (ODMR). This defect is shown to be a deep level center (with an energy level at about Ec-1.1 eV), evident from the related deep photoluminescence emission and a photo-excitation spectrum of the ODMR signal. The fact that this defect has been observed in both bulk crystals and epilayers, regardless of their doping type, indicates that this must be a common and basic defect in 6H SiC. © 1994 American Institute of Physics.

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页码：2687 / 2689

页数：3

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