DEVELOPMENT OF GATE-LAG EFFECT ON GAAS POWER MESFETS DURING AGING

[1] GATE METALLIZATION SINKING INTO THE ACTIVE CHANNEL IN TI/W/AU METALLIZED POWER MESFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 185 - 187

[2] DEGRADATION MECHANISMS INDUCED BY TEMPERATURE IN POWER MESFETS [J]. ELECTRONICS LETTERS, 1985, 21 (14) : 600 - 601

[3] Davey J. E., 1981, Reliability and degradation. Semiconductor devices and circuits, P237

[4] GAAS POWER MESFETS - DESIGN, FABRICATION, AND PERFORMANCE [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (05) : 367 - 378

[5] ANALYSIS OF SURFACE-INDUCED DEGRADATION OF GAAS POWER MESFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (04) : 192 - 194

[6] EVIDENCE OF DETRIMENTAL SURFACE EFFECTS ON GAAS POWER MESFETS [J]. ELECTRONICS LETTERS, 1982, 18 (25-2) : 1094 - 1095

[7] DETERMINATION OF THE BASIC DEVICE PARAMETERS OF A GAAS-MESFET [J]. BELL SYSTEM TECHNICAL JOURNAL, 1979, 58 (03): : 771 - 797

[8] IRVIN JC, 1982, GAAS FET PRINCIPLES, P349

[9] ROCCHI M, 1985, P EUR SOL STAT DEV R, P119

[1] GATE METALLIZATION SINKING INTO THE ACTIVE CHANNEL IN TI/W/AU METALLIZED POWER MESFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 185 - 187

[2] DEGRADATION MECHANISMS INDUCED BY TEMPERATURE IN POWER MESFETS [J]. ELECTRONICS LETTERS, 1985, 21 (14) : 600 - 601

[3] Davey J. E., 1981, Reliability and degradation. Semiconductor devices and circuits, P237

[4] GAAS POWER MESFETS - DESIGN, FABRICATION, AND PERFORMANCE [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (05) : 367 - 378

[5] ANALYSIS OF SURFACE-INDUCED DEGRADATION OF GAAS POWER MESFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (04) : 192 - 194

[6] EVIDENCE OF DETRIMENTAL SURFACE EFFECTS ON GAAS POWER MESFETS [J]. ELECTRONICS LETTERS, 1982, 18 (25-2) : 1094 - 1095

[7] DETERMINATION OF THE BASIC DEVICE PARAMETERS OF A GAAS-MESFET [J]. BELL SYSTEM TECHNICAL JOURNAL, 1979, 58 (03): : 771 - 797

[8] IRVIN JC, 1982, GAAS FET PRINCIPLES, P349

[9] ROCCHI M, 1985, P EUR SOL STAT DEV R, P119