ANALYSIS OF SURFACE-INDUCED DEGRADATION OF GAAS POWER MESFETS

被引：7

作者：

DUMAS, JM ^{[1
]}

LECROSNIER, D ^{[1
]}

BRESSE, JF ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 04期

关键词：

D O I：

10.1109/EDL.1985.26093

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：192 / 194

页数：3

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