COMPARISON OF THE STRUCTURE AND ELECTRICAL-PROPERTIES OF THIN TUNGSTEN FILMS DEPOSITED BY RADIO-FREQUENCY SPUTTERING AND ION-BEAM SPUTTERING

被引：11

作者：

MURRAY, R

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 09期

关键词：

D O I：

10.1063/1.335734

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3583 / 3589

页数：7

共 15 条

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[4]

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[5]

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[7] CHARACTERISTICS OF ION-BEAM-SPUTTERED THIN-FILMS [J].

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[8]

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[9] HIGH RESISTIVITY OF DC-SPUTTERED METAL FILMS [J].

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[10] THIN FILMS DEPOSITED BY BIAS SPUTTERING [J].

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