HIGH RESISTIVITY OF DC-SPUTTERED METAL FILMS

[1] BROWN R, 1967, MEASUREMENT TECHNIQU, P128

[2] KORNELSON EV, 1964, CAN J PHYS, V42, P362

[3] HIGH RESISTIVITY SPUTTERED TANTALUM FILMS FOR MICROELECTRONIC APPLICATIONS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (12): : 2164 - &

[4] DEPOSITION OF TANTALUM TANTALUM OXIDE AND TANTALUM NITRIDE WITH CONTROLLED ELECTRICAL CHARACTERISTICS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) : 3674 - +

[5] METAL FILMS SPUTTERED AT LOW VOLTAGES [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) : 5366 - &

[6] THIN FILMS DEPOSITED BY BIAS SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) : 237 - &

[7] OBLAS D, 1968, J APPL PHYS, V39, P13

[8] OBLAS D, 1970, J VAC SCI TECHNOL, V7, P29

[9] DETERMINATION OF ARGON IN THIN FILMS BY RF SPARK-SOURCE MASS SPECTROGRAPHY [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (13) : 6106 - &

[10] SHUETZE HJ, 1963, 10 P NAT VAC S, P434

[1] BROWN R, 1967, MEASUREMENT TECHNIQU, P128

[2] KORNELSON EV, 1964, CAN J PHYS, V42, P362

[3] HIGH RESISTIVITY SPUTTERED TANTALUM FILMS FOR MICROELECTRONIC APPLICATIONS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (12): : 2164 - &

[4] DEPOSITION OF TANTALUM TANTALUM OXIDE AND TANTALUM NITRIDE WITH CONTROLLED ELECTRICAL CHARACTERISTICS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) : 3674 - +

[5] METAL FILMS SPUTTERED AT LOW VOLTAGES [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) : 5366 - &

[6] THIN FILMS DEPOSITED BY BIAS SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) : 237 - &

[7] OBLAS D, 1968, J APPL PHYS, V39, P13

[8] OBLAS D, 1970, J VAC SCI TECHNOL, V7, P29

[9] DETERMINATION OF ARGON IN THIN FILMS BY RF SPARK-SOURCE MASS SPECTROGRAPHY [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (13) : 6106 - &

[10] SHUETZE HJ, 1963, 10 P NAT VAC S, P434