THE OTHER SIDE OF THE SCHOTTKY-BARRIER FORMATION PROCESS - SI 3X3 OVERLAYERS ON AL(111)

被引：8

作者：

CHANG, Y ^{[1
]}

COLAVITA, E ^{[1
]}

TACHE, N ^{[1
]}

MARGARITONDO, G ^{[1
]}

机构：

[1] UNIV WISCONSIN, CTR SYNCHROTRON RADIAT, MADISON, WI 53706 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1988年 / 6卷 / 03期

关键词：

D O I：

10.1116/1.575218

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1971 / 1972

页数：2

共 16 条

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[4] THEORY OF SURFACE STATES
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[5] THE KINETICS OF SCHOTTKY-BARRIER FORMATION - AL ON LOW-TEMPERATURE GAAS(110)
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[J]. SOLID STATE COMMUNICATIONS, 1986, 58 (07) : 429 - 432
[6] HIGH-RESOLUTION ELECTRON-ENERGY LOSS AS A PROBE OF THE SI-AL SCHOTTKY-BARRIER FORMATION PROCESS
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[J]. PHYSICAL REVIEW B, 1985, 32 (04): : 2693 - 2695
[7] DIRECT PICTURE OF THE LOCAL ELECTRONIC-STRUCTURE DURING THE SI(111)7X7-AL SCHOTTKY-BARRIER FORMATION PROCESS
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LAPEYRE, GJ
[J]. PHYSICAL REVIEW B, 1986, 34 (08): : 6011 - 6013
[8] MICROSCOPIC INVESTIGATIONS OF SEMICONDUCTOR INTERFACES
MARGARITONDO, G
[J]. SOLID-STATE ELECTRONICS, 1983, 26 (06) : 499 - 513
[9] SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY OF III-VI COMPOUNDS
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[J]. PHYSICAL REVIEW B, 1977, 15 (08): : 3844 - 3854
[10] MARGARITONDO G, 1984, ANNU REV MATER SCI, V14, P67

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