THE KINETICS OF SCHOTTKY-BARRIER FORMATION - AL ON LOW-TEMPERATURE GAAS(110)

被引：30

作者：

KELLY, MK ^{[1
]}

KAHN, A ^{[1
]}

TACHE, N ^{[1
]}

COLAVITA, E ^{[1
]}

MARGARITONDO, G ^{[1
]}

机构：

[1] PRINCETON UNIV,DEPT ELECT ENGN & APPL SCI,PRINCETON,NJ 08544

来源：

关键词：

D O I：

10.1016/0038-1098(86)90025-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：429 / 432

页数：4

共 20 条

[1] AN AES-ELEED STUDY OF THE AL/GAP(110) INTERFACE
BONAPACE, CR
KAHN, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 588 - 591
[2] BONAPACE CR, 1981, J PHYS, V4, P409
[3] BONAPACE CR, 1985, J VAC SCI TECHNOL B, V3, pR30
[4] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES
Brillson, L. J.
[J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326
[5] ELECTRONIC-STRUCTURE OF THE AL-GAAS(110) SURFACE CHEMISORPTION SYSTEM
CHELIKOWSKY, JR
CHADI, DJ
COHEN, ML
[J]. PHYSICAL REVIEW B, 1981, 23 (08): : 4013 - 4022
[6] INITIAL ADSORPTION STATE FOR AL ON GAAS(110) AND ITS ROLE IN THE SCHOTTKY-BARRIER FORMATION
DANIELS, RR
KATNANI, AD
ZHAO, TX
MARGARITONDO, G
ZUNGER, A
[J]. PHYSICAL REVIEW LETTERS, 1982, 49 (12) : 895 - 898
[7] ATOMIC GEOMETRY OF GAAS(110)-P(1X1)-AL
DUKE, CB
PATON, A
MEYER, RJ
BRILLSON, LJ
KAHN, A
KANANI, D
CARELLI, J
YEH, JL
MARGARITONDO, G
KATNANI, AD
[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (06) : 440 - 443
[8] 1ST-PRINCIPLES DETERMINATION OF THE STRUCTURE OF THE AL/GAAS (110) SURFACE
IHM, J
JOANNOPOULOS, JD
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 340 - 343
[9] Kahn A., 1981, SOLID STATE COMMUN, V38, P1269
[10] LINDAU I, 1981, SYNCHROTRON RAD RES, P159