AN AES-ELEED STUDY OF THE AL/GAP(110) INTERFACE

被引：9

作者：

BONAPACE, CR

KAHN, A

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.571963

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：588 / 591

页数：4

共 18 条

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[3] FERMI-LEVEL PINNING AND CHEMICAL-STRUCTURE OF INP-METAL INTERFACES
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[4] DYNAMICAL ANALYSIS OF LOW-ENERGY-ELECTRON-DIFFRACTION INTENSITIES FROM GAP(110)
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PATON, A
FORD, WK
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CARELLI, J
[J]. PHYSICAL REVIEW B, 1981, 24 (02): : 562 - 573
[5] DUKE CB, UNPUB PHYS REV B
[6] ATOMIC GEOMETRY OF AL-GAAS INTERFACES - GAAS (110)-P(1X1)-AL(THETA), 0 LESS-THAN-OR-EQUAL TO THETA LESS-THAN-OR-EQUAL TO 8.5 MONOLAYERS
KAHN, A
CARELLI, J
KANANI, D
DUKE, CB
PATON, A
BRILLSON, L
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 331 - 334
[7] KAHN A, 1983, J VAC SCI TECHNOL A, V1
[8] KAHN A, 1982, 2ND P IUPAP SEM S TR
[9] Kahn A., 1981, SOLID STATE COMMUN, V38, P1269
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