SEMICONDUCTOR-LASER FACET REFLECTIVITIES USING FREE-SPACE RADIATION MODES

被引：48

作者：

KENDALL, PC ^{[1
]}

ROBERTS, DA ^{[1
]}

ROBSON, PN ^{[1
]}

ADAMS, MJ ^{[1
]}

ROBERTSON, MJ ^{[1
]}

机构：

[1] BT LABS,IPSWICH IP5 7RE,ENGLAND

来源：

IEE PROCEEDINGS-J OPTOELECTRONICS | 1993年 / 140卷 / 01期

关键词：

SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/ip-j.1993.0009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Free-space radiation modes are used to determine a new formula for the main mode reflectivity of a multicoated semiconductor laser facet at normal incidence. The results are shown to compare favourably with exact values, and to provide some unification for the Fresnel methods.

引用

页码：49 / 55

页数：7

共 38 条

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