FIELD-EFFECT IN AMORPHOUS-GERMANIUM

被引：10

作者：

MALHOTRA, AK ^{[1
]}

NEUDECK, GW ^{[1
]}

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 06期

关键词：

D O I：

10.1063/1.321904

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2690 / 2692

页数：3

共 11 条

[1] SWITCHING PHENOMENA IN THIN-FILMS [J].

ADLER, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (05) :728-738

[2] THEORY OF FIELD EFFECT IN AMORPHOUS COVALENT SEMICONDUCTOR FILMS [J].

BARBE, DF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01) :102-&

[3] PHOTOVOLTAIC EFFECT IN AMORPHOUS-SILICON-ELECTROLYTE INTERFACE [J].

CHAN, YK ;

JAYADEVAIAH, TS .

APPLIED PHYSICS LETTERS, 1973, 22 (12) :628-629

[4] OXIDATION STUDIES OF AMORPHOUS AND CRYSTALLINE GERMANIUM FILMS BY AUGER-SPECTROSCOPY [J].

FAN, JCC ;

HENRICH, VE .

APPLIED PHYSICS LETTERS, 1974, 25 (07) :401-403

[5] AMBIENT INDUCED CHANGES OF CONDUCTANCE OF AMORPHOUS GERMANIUM [J].

KASTNER, M ;

FRITZSCHE, H .

MATERIALS RESEARCH BULLETIN, 1970, 5 (08) :631-+

[6]

KNOTEK ML, 1974, 1974 P C TETR BOND A

[7] FIELD-EFFECT CONDUCTANCE CHANGE IN AMORPHOUS SILICON [J].

MALHOTRA, AK ;

NEUDECK, GW .

APPLIED PHYSICS LETTERS, 1974, 24 (11) :557-559

[8]

MELL H, 1973, 5TH P INT C AM LIQ S

[9] FIELD-EFFECT CONDUCTANCE MODULATION IN VACUUM-EVAPORATED AMORPHOUS SILICON FILMS [J].

NEUDECK, GW ;

MALHOTRA, AK .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :239-247

[10]

NEUDECK GW, 1975, J APPL PHYS, V46, P2262

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