EVIDENCE FOR SOLID-STATE EFFECTS IN THE ELECTRONIC-STRUCTURE OF C60 FILMS - A RESONANCE-RAMAN STUDY

被引：36

作者：

SINHA, K ^{[1
]}

MENENDEZ, J ^{[1
]}

HANSON, RC ^{[1
]}

ADAMS, GB ^{[1
]}

PAGE, JB ^{[1
]}

SANKEY, OF ^{[1
]}

LAMB, LD ^{[1
]}

HUFFMAN, DR ^{[1
]}

机构：

[1] UNIV ARIZONA,DEPT PHYS,TUCSON,AZ 85721

来源：

CHEMICAL PHYSICS LETTERS | 1991年 / 186卷 / 2-3期

关键词：

D O I：

10.1016/S0009-2614(91)85143-K

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The Raman excitation profiles for C60 films grown on silicon reveal the existence of optical transitions near 2.4 eV, well below the lowest dipole-allowed absorption line predicted for isolated icosahedral molecules. These transitions are not observed in C60 dissolved in CS2. We propose an explanation in terms of a breakdown of the icosahedral inversion symmetry in C60 crystals.

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页码：287 / 290

页数：4

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