HIGH-TEMPERATURE DEPLETION-MODE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IN BETA-SIC THIN-FILMS

[1] BEHAVIOR OF INVERSION-LAYERS IN 3C SILICON-CARBIDE [J]. APPLIED PHYSICS LETTERS, 1986, 49 (06) : 334 - 336

[2] Carter C. H. Jr., 1986, Journal of Materials Research, V1, P811, DOI 10.1557/JMR.1986.0811

[3] EDMOND JA, IN PRESS J APPL PHYS

[4] KELNER G, 1987, MATERIALS RES SOC S, V97, P227

[5] KEYES RW, 1974, SILICON CARBIDE 1973, P534

[6] THEORETICAL AND EMPIRICAL-STUDIES OF IMPURITY INCORPORATION INTO BETA-SIC THIN-FILMS DURING EPITAXIAL-GROWTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (11) : 2350 - 2357

[7] EXPERIMENTAL 3C-SIC MOSFET [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) : 404 - 406

[8] Kong H. S., 1987, MATER RES SOC S P, V97, P233

[9] EPITAXIAL-GROWTH OF BETA-SIC THIN-FILMS ON 6H ALPHA-SIC SUBSTRATES VIA CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1074 - 1076

[10] TEMPERATURE-DEPENDENCE OF THE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IN N-TYPE BETA-SIC GROWN VIA CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1987, 51 (06) : 442 - 444

[1] BEHAVIOR OF INVERSION-LAYERS IN 3C SILICON-CARBIDE [J]. APPLIED PHYSICS LETTERS, 1986, 49 (06) : 334 - 336

[2] Carter C. H. Jr., 1986, Journal of Materials Research, V1, P811, DOI 10.1557/JMR.1986.0811

[3] EDMOND JA, IN PRESS J APPL PHYS

[4] KELNER G, 1987, MATERIALS RES SOC S, V97, P227

[5] KEYES RW, 1974, SILICON CARBIDE 1973, P534

[6] THEORETICAL AND EMPIRICAL-STUDIES OF IMPURITY INCORPORATION INTO BETA-SIC THIN-FILMS DURING EPITAXIAL-GROWTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (11) : 2350 - 2357

[7] EXPERIMENTAL 3C-SIC MOSFET [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) : 404 - 406

[8] Kong H. S., 1987, MATER RES SOC S P, V97, P233

[9] EPITAXIAL-GROWTH OF BETA-SIC THIN-FILMS ON 6H ALPHA-SIC SUBSTRATES VIA CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1074 - 1076

[10] TEMPERATURE-DEPENDENCE OF THE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IN N-TYPE BETA-SIC GROWN VIA CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1987, 51 (06) : 442 - 444