COMPARISON OF LATERAL RESOLUTION OF FINE STRIPES BERYLLIUM AND BORON IMPLANTED BY FOCUSED ION-BEAM IN SI-DOPED ALGAAS/GAAS MULTIQUANTUM WELLS

被引：1

作者：

BRILLOUET, F

ISHIDA, K

MORITA, T

MIYAUCHI, E

TAKAMORI, T

NAKASHIMA, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 08期

关键词：

D O I：

10.1143/JJAP.26.1320

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1320 / 1323

页数：4

共 8 条

[1]

IHSIDA K, 1986, JPN J APPL PHYS, V25, pL783

[2] SIMS STUDY OF SI-BE CO-DOPING EFFECTS FOR SUPPRESSION OF COMPOSITIONAL DISORDERING IN ALGAAS-GAAS SUPERLATTICES [J].

KOBAYASHI, J ;

NAKAJIMA, M ;

FUKUNAGA, T ;

TAKAMORI, T ;

ISHIDA, K ;

NAKASHIMA, H ;

ISHIDA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (09) :L736-L738

[3]

LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[4] DISORDER OF AN ALXGA1-XAS-GAAS SUPERLATTICE BY DONOR DIFFUSION [J].

MEEHAN, K ;

HOLONYAK, N ;

BROWN, JM ;

NIXON, MA ;

GAVRILOVIC, P ;

BURNHAM, RD .

APPLIED PHYSICS LETTERS, 1984, 45 (05) :549-551

[5] MASKLESS ION-IMPLANTATION TECHNOLOGY FOR III-V COMPOUND SEMICONDUCTORS [J].

MIYAUCHI, E ;

HASHIMOTO, H .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) :851-857

[6] DISORDERING OF GA1-XALXAS-GAAS QUANTUM WELL STRUCTURES BY DONOR SULFUR DIFFUSION [J].

RAO, EVK ;

THIBIERGE, H ;

BRILLOUET, F ;

ALEXANDRE, F ;

AZOULAY, R .

APPLIED PHYSICS LETTERS, 1985, 46 (09) :867-869

[7] INVESTIGATION OF COMPENSATION IN IMPLANTED N-GAAS [J].

RAO, EVK ;

DUHAMEL, N ;

FAVENNEC, PN ;

LHARIDON, H .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3898-3905

[8]

YAOHWAWU, 1986, ELECTRON LETT, V22, P115

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