MASKLESS ION-IMPLANTATION TECHNOLOGY FOR III-V COMPOUND SEMICONDUCTORS

被引：22

作者：

MIYAUCHI, E

HASHIMOTO, H

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 7-8卷 / MAR期

关键词：

D O I：

10.1016/0168-583X(85)90482-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：851 / 857

页数：7

共 28 条

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[2] NOVEL METHOD FOR MEASURING INTENSITY DISTRIBUTION OF FOCUSED ION-BEAMS [J].

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[3] FOCUSED SI ION-IMPLANTATION IN GAAS [J].

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[8] A 100-KV ION PROBE MICROFABRICATION SYSTEM WITH A TETRODE GUN [J].

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AHMED, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1145-1148

[9] THEORETICAL CONSIDERATIONS ON LATERAL SPREAD OF IMPLANTED IONS [J].

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[10] CHARACTERISTICS OF BE-SI-AU TERNARY ALLOY LIQUID-METAL ION SOURCES [J].

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