ULTRAHIGH-VACUUM STUDIES OF PD METAL-INSULATOR SEMICONDUCTOR DIODE H-2 SENSORS

被引：38

作者：

RYE, RR

RICCO, AJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 03期

关键词：

D O I：

10.1063/1.339739

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1084 / 1092

页数：9

共 17 条

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