TRANSPORT AND REACTION BEHAVIOR IN AIX-2000 PLANETARY METALORGANIC VAPOR-PHASE EPITAXY REACTOR

被引：12

作者：

BERGUNDE, T ^{[1
]}

GUTSCHE, D ^{[1
]}

KADINSKI, L ^{[1
]}

MAKAROV, Y ^{[1
]}

WEYERS, M ^{[1
]}

机构：

[1] UNIV ERLANGEN NURNBERG,LEHRSTUHL STROMUNGSMECH,D-91058 ERLANGEN,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 146卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00573-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Basic dependencies of GaAs and AlGaAs growth rate profiles on growth parameters obtained in an Aix-2000 Planetary reactor have been studied experimentally as well theoretically. Based on the obtained results optimized growth parameters and an optimized inlet geometry are derived that now allow for highly homogeneous growth (Delta d/d < +/-1%) on five 3 inch wafers. Excellent homogeneity is achieved together with high material quality as indicated by the electrical and optical properties of the grown structures.

引用

页码：564 / 569

页数：6

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