MODELING OF GROWTH IN A 5X3 INCH MULTIWAFER METALORGANIC VAPOR-PHASE EPITAXY REACTOR

被引：15

作者：

BERGUNDE, T ^{[1
]}

DURST, F ^{[1
]}

KADINSKI, L ^{[1
]}

MAKAROV, YN ^{[1
]}

SCHAFER, M ^{[1
]}

WEYERS, M ^{[1
]}

机构：

[1] UNIV ERLANGEN NURNBERG,LEHRSTUHL STROMUNGSMECH,D-91058 ERLANGEN,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 145卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)91118-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A detailed theoretical study of the growth of GaAs and AlGaAs in a multiwafer PLANET reactor has been performed and combined with experimental verification. The effects of variations in temperature profile, flow rate and flow distribution have been studied and basic trends have been identified. Parasitic depositions on the reactor ceiling have been studied and their profile has been understood. Based on the investigations, thickness homogeneity was improved to better than +/-1% on 3 inch wafers.

引用

页码：630 / 635

页数：6

共 11 条

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