MORPHOLOGY OF SI(100) SURFACES EXPOSED TO A REMOTE H PLASMA

被引：17

作者：

MONTGOMERY, JS ^{[1
]}

SCHNEIDER, TP ^{[1
]}

CARTER, RJ ^{[1
]}

BARNAK, JP ^{[1
]}

CHEN, YL ^{[1
]}

HAUSER, JR ^{[1
]}

NEMANICH, RJ ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT PHYS,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 15期

关键词：

D O I：

10.1063/1.115100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This study addresses the formation of roughness and near surface defects on Si(100) surfaces that are exposed to a remotely excited H plasma. The remote H plasma processing can be employed for in situ wafer cleaning. Atomic force microscopy, transmission electron microscopy, and residual gas analysis are used to measure the surface roughness, the near surface defects, and the etching, respectively. For remote H plasma exposures at substrate temperatures less than or equal to 300 degrees C, etching is observed along with a significant increase in the surface roughness and the formation of platelet defects in the near surface region. As the substrate temperature is increased to above 450 degrees C, etching is significantly reduced and no subsurface defects or increases in surface roughness are observed. (C) 1995 American Institute of Physics.

引用

页码：2194 / 2196

页数：3

共 15 条

[1] INSITU CLEANING OF SILICON SUBSTRATE SURFACES BY REMOTE PLASMA-EXCITED HYDROGEN [J].