PROPERTIES OF SILICON SURFACE CLEANED BY HYDROGEN PLASMA

被引：42

作者：

ISHII, M

NAKASHIMA, K

TAJIMA, I

YAMAMOTO, M

机构：

[1] Toyota Central Research and Development Labs. Inc., Aichi-gun, Aichi-ken 480-11, Nagakute-cho

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 13期

关键词：

D O I：

10.1063/1.105211

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Properties of the silicon surface cleaned by the irradiation of the hydrogen electron cyclotron resonance plasma has been studied by x-ray photoelectron spectroscopy, reflection high-energy electron diffraction, and Fourier transform infrared spectroscopy. It was confirmed that the irradiation of the hydrogen plasma eliminated both a native oxide layer and a contaminated carbon layer from the silicon surface. In addition, it was found that the surface has the retardation effect on the air oxidation at room temperature. However, the plasma irradiation caused the minute roughness on the surface and hydrogen penetration into the bulk.

引用

页码：1378 / 1380

页数：3

共 10 条

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