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- [1] WARPAGE OF GAAS-ON-SI WAFERS AND ITS REDUCTION BY SELECTIVE GROWTH OF GAAS THROUGH A SILICON SHADOW MASK BY MOLECULAR-BEAM EPITAXY[J]. APPLIED PHYSICS LETTERS, 1988, 53 (03) : 225 - 227CHAND, NVANDERZIEL, JPWEINER, JSSERGENT, AMCHO, AYGRIM, KA
- [2] HETEROEPITAXY OF GAAS ON SI - THE EFFECT OF INSITU THERMAL ANNEALING UNDER ASH3[J]. APPLIED PHYSICS LETTERS, 1988, 52 (23) : 1976 - 1978FREUNDLICH, AGRENET, JCNEU, GLEYCURAS, AVERIE, C
- [3] GAAS HETEROEPITAXIAL GROWTH ON SI FOR SOLAR-CELLS[J]. APPLIED PHYSICS LETTERS, 1988, 52 (19) : 1617 - 1618ITOH, YNISHIOKA, TYAMAMOTO, AYAMAGUCHI, M
- [4] INFLUENCE OF ANNEALING AND SUBSTRATE ORIENTATION ON METALORGANIC CHEMICAL VAPOR-DEPOSITION GAAS ON SILICON HETEROEPITAXY[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) : 1196 - 1200KALISKI, RWITO, CRMCINTYRE, DGFENG, MKIM, HBBEAN, RZANIO, KHSIEH, KC
- [5] KONDO N, 1988, AIP C P, V167, P320
- [6] ROOM-TEMPERATURE LASER OPERATION OF AIGAAS GAAS DOUBLE HETEROSTRUCTURES FABRICATED ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION[J]. APPLIED PHYSICS LETTERS, 1986, 48 (06) : 413 - 414SAKAI, SSOGA, TTAKEYASU, MUMENO, M
- [7] DEGRADATION OF GAAS-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SI SUBSTRATES[J]. APPLIED PHYSICS LETTERS, 1987, 51 (02) : 89 - 91VANDERZIEL, JPDUPUIS, RDLOGAN, RAPINZONE, CJ
- [8] LOW THRESHOLD PULSED AND CONTINUOUS LASER OSCILLATION FROM ALGAAS/GAAS DOUBLE HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SI SUBSTRATES[J]. APPLIED PHYSICS LETTERS, 1987, 50 (08) : 454 - 456VANDERZIEL, JPDUPUIS, RDLOGAN, RAMIKULYAK, RMPINZONE, CJSAVAGE, A
- [9] SELECTIVE AREA GROWTH OF GAAS BY ELECTRON-CYCLOTRON RESONANCE PLASMA-EXCITED MOLECULAR-BEAM EPITAXY (ECR-MBE)[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 96 (03) : 705 - 707YAMAMOTO, NKONDO, NNANISHI, Y