SELECTIVE AREA GROWTH OF GAAS BY ELECTRON-CYCLOTRON RESONANCE PLASMA-EXCITED MOLECULAR-BEAM EPITAXY (ECR-MBE)

被引：13

作者：

YAMAMOTO, N

KONDO, N

NANISHI, Y

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 96卷 / 03期

关键词：

D O I：

10.1016/0022-0248(89)90072-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：705 / 707

页数：3

共 10 条

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