LOW-TEMPERATURE SELECTIVE GROWTH OF GAAS BY ALTERNATELY SUPPLYING MOLECULAR-BEAM EPITAXY

被引：24

作者：

YOKOYAMA, S

OOGI, J

YUI, D

KAWABE, M

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90344-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：32 / 34

页数：3

共 7 条

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