WARPAGE OF GAAS-ON-SI WAFERS AND ITS REDUCTION BY SELECTIVE GROWTH OF GAAS THROUGH A SILICON SHADOW MASK BY MOLECULAR-BEAM EPITAXY

被引：21

作者：

CHAND, N ^{[1
]}

VANDERZIEL, JP ^{[1
]}

WEINER, JS ^{[1
]}

SERGENT, AM ^{[1
]}

CHO, AY ^{[1
]}

GRIM, KA ^{[1
]}

机构：

[1] AT&T BELL LABS,READING,PA 19601

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 03期

关键词：

D O I：

10.1063/1.100138

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：225 / 227

页数：3

共 23 条

[1] PROCESSING AND CHARACTERIZATION OF GAAS GROWN INTO RECESSED SILICON [J].

ADKISSON, JW ;

KAMINS, TI ;

KOCH, SM ;

HARRIS, JS ;

ROSNER, SJ ;

REID, GA ;

NAUKA, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :717-719

[2] ELECTRICAL-ACTIVITY OF DEFECTS IN MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI AND ITS REDUCTION BY RAPID THERMAL ANNEALING [J].

CHAND, N ;

FISCHER, R ;

SERGENT, AM ;

LANG, DV ;

PEARTON, SJ ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1987, 51 (13) :1013-1015

[3] EFFECT OF ARSENIC SOURCE ON THE GROWTH OF HIGH-PURITY GAAS BY MOLECULAR-BEAM EPITAXY [J].

CHAND, N ;

MILLER, RC ;

SERGENT, AM ;

SPUTZ, SK ;

LANG, DV .

APPLIED PHYSICS LETTERS, 1988, 52 (20) :1721-1723

[4] GAAS AVALANCHE PHOTODIODES AND THE EFFECT OF RAPID THERMAL ANNEALING ON CRYSTALLINE QUALITY OF GAAS GROWN ON SI BY MOLECULAR-BEAM EPITAXY [J].

CHAND, N ;

ALLAM, J ;

GIBSON, JM ;

CAPASSO, F ;

BELTRAM, F ;

MACRANDER, AT ;

HUTCHINSON, AL ;

HOPKINS, LC ;

BETHEA, CG ;

LEVINE, BF ;

CHO, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03) :822-826

[5] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J].

CHAND, N ;

PEOPLE, R ;

BAIOCCHI, FA ;

WECHT, KW ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1986, 49 (13) :815-817

[6] RECENT DEVELOPMENTS IN MOLECULAR-BEAM EPITAXY (MBE) [J].

CHO, AY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :275-284

[7] GAAS PLANAR TECHNOLOGY BY MOLECULAR-BEAM EPITAXY (MBE) [J].

CHO, AY ;

BALLAMY, WC .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) :783-785

[8]

CHO AY, 1987, 1987 P INT EL DEV M, P91

[9] EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES [J].

CHOI, C ;

OTSUKA, N ;

MUNNS, G ;

HOUDRE, R ;

MORKOC, H ;

ZHANG, SL ;

LEVI, D ;

KLEIN, MV .

APPLIED PHYSICS LETTERS, 1987, 50 (15) :992-994

[10]

FAN JCC, 1986, MATERIALS RES SOC S, V67

← 1 2 3 →