EFFECT OF ARSENIC SOURCE ON THE GROWTH OF HIGH-PURITY GAAS BY MOLECULAR-BEAM EPITAXY

被引：32

作者：

CHAND, N

MILLER, RC

SERGENT, AM

SPUTZ, SK

LANG, DV

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 20期

关键词：

D O I：

10.1063/1.99028

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1721 / 1723

页数：3

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