TIGHT-BINDING CALCULATIONS FOR THE ELECTRONIC-STRUCTURE OF ISOLATED VACANCIES AND IMPURITIES IN III-V COMPOUND SEMICONDUCTORS

被引：129

作者：

TALWAR, DN ^{[1
]}

TING, CS ^{[1
]}

机构：

[1] UNIV HOUSTON,DEPT PHYS,HOUSTON,TX 77004

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.25.2660

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2660 / 2680

页数：21

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