共 13 条
THRESHOLD BEHAVIOR OF CW GAAS-A1GAAS INJECTION LASERS
被引:2
作者:

BUTLER, JK
论文数: 0 引用数: 0
h-index: 0
机构:
SO METHODIST UNIV,DEPT ELECT ENGN,DALLAS,TX 75275 SO METHODIST UNIV,DEPT ELECT ENGN,DALLAS,TX 75275

WANG, CS
论文数: 0 引用数: 0
h-index: 0
机构:
SO METHODIST UNIV,DEPT ELECT ENGN,DALLAS,TX 75275 SO METHODIST UNIV,DEPT ELECT ENGN,DALLAS,TX 75275
机构:
[1] SO METHODIST UNIV,DEPT ELECT ENGN,DALLAS,TX 75275
关键词:
D O I:
10.1109/JQE.1976.1069113
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
引用
收藏
页码:165 / 168
页数:4
相关论文
共 13 条
- [1] INTERNAL OPTICAL LOSSES IN VERY THIN CW HETEROJUNCTION LASER-DIODES[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 402 - 408BUTLER, JK论文数: 0 引用数: 0 h-index: 0机构: SO METHODIST UNIV,DALLAS,TX 75275KRESSEL, H论文数: 0 引用数: 0 h-index: 0机构: SO METHODIST UNIV,DALLAS,TX 75275LADANY, I论文数: 0 引用数: 0 h-index: 0机构: SO METHODIST UNIV,DALLAS,TX 75275
- [2] THEORY OF TRANSVERSE CAVITY MODE SELECTION IN HOMOJUNCTION AND HETEROJUNCTION SEMICONDUCTOR DIODE LASERS[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4447 - +BUTLER, JK论文数: 0 引用数: 0 h-index: 0
- [3] RADIATION-FIELDS OF GAAS-(ALGA)AS INJECTION LASERS[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1974, QE10 (10) : 809 - 815BUTLER, JK论文数: 0 引用数: 0 h-index: 0机构: SO METHODIST UNIV, INST TECHNOL, DEPT ELECT ENGN, DALLAS, TX 75275 USA SO METHODIST UNIV, INST TECHNOL, DEPT ELECT ENGN, DALLAS, TX 75275 USAZOROOFCHI, J论文数: 0 引用数: 0 h-index: 0机构: SO METHODIST UNIV, INST TECHNOL, DEPT ELECT ENGN, DALLAS, TX 75275 USA SO METHODIST UNIV, INST TECHNOL, DEPT ELECT ENGN, DALLAS, TX 75275 USA
- [4] REFRACTIVE-INDEX OF ALXGA1-X AS BETWEEN 1.2 AND 1.8 EV[J]. APPLIED PHYSICS LETTERS, 1974, 24 (02) : 63 - 65CASEY, HC论文数: 0 引用数: 0 h-index: 0机构: BELL TEL LABS INC,MURRAY HILL,NJ 07974 BELL TEL LABS INC,MURRAY HILL,NJ 07974SELL, DD论文数: 0 引用数: 0 h-index: 0机构: BELL TEL LABS INC,MURRAY HILL,NJ 07974 BELL TEL LABS INC,MURRAY HILL,NJ 07974PANISH, MB论文数: 0 引用数: 0 h-index: 0机构: BELL TEL LABS INC,MURRAY HILL,NJ 07974 BELL TEL LABS INC,MURRAY HILL,NJ 07974
- [5] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4113 - 4119HAKKI, BW论文数: 0 引用数: 0 h-index: 0机构: BELL LABS,MURRAY HILL,NJ 07974 BELL LABS,MURRAY HILL,NJ 07974PAOLI, TL论文数: 0 引用数: 0 h-index: 0机构: BELL LABS,MURRAY HILL,NJ 07974 BELL LABS,MURRAY HILL,NJ 07974
- [6] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 1929 - &HAYASHI, I论文数: 0 引用数: 0 h-index: 0PANISH, MB论文数: 0 引用数: 0 h-index: 0REINHART, FK论文数: 0 引用数: 0 h-index: 0
- [7] 6190-A EMISSION AT 77 K OF GA1-XALXAS DOUBLE HETEROSTRUCTURE LASERS[J]. APPLIED PHYSICS LETTERS, 1974, 24 (03) : 127 - 129ITOH, K论文数: 0 引用数: 0 h-index: 0机构: MATSUSHITA ELECT CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN MATSUSHITA ELECT CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN
- [8] LOW-THRESHOLD ALX GA1-X AS VISIBLE AND IR-LIGHT-EMITTING DIODE LASERS[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1970, QE 6 (06) : 278 - &KRESSEL, H论文数: 0 引用数: 0 h-index: 0LOCKWOOD, HF论文数: 0 引用数: 0 h-index: 0NELSON, H论文数: 0 引用数: 0 h-index: 0
- [9] FABRY-PEROT STRUCTURE ALXGA1-XAS INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLD CURRENT DENSITIES OF 2530 A/CM2[J]. APPLIED PHYSICS LETTERS, 1970, 17 (04) : 169 - +KRESSEL, H论文数: 0 引用数: 0 h-index: 0HAWRYLO, FZ论文数: 0 引用数: 0 h-index: 0
- [10] MEASUREMENTS OF REFRACTIVE-INDEX STEP AND OF CARRIER CONFINEMENT AT (AIGA) AS-GAAS HETEROJUNCTIONS[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4095 - 4097KRESSEL, H论文数: 0 引用数: 0 h-index: 0机构: RCA LABS,PRINCETON,NJ 08540 RCA LABS,PRINCETON,NJ 08540LOCKWOOD, HF论文数: 0 引用数: 0 h-index: 0机构: RCA LABS,PRINCETON,NJ 08540 RCA LABS,PRINCETON,NJ 08540BUTLER, JK论文数: 0 引用数: 0 h-index: 0机构: RCA LABS,PRINCETON,NJ 08540 RCA LABS,PRINCETON,NJ 08540