STRESS EFFECTS IN BORON-IMPLANTED POLYSILICON FILMS

[1] BROTHERTON SD, 1973, ELECTROCHEMICAL SOC, P385

[2] BRUNK HD, 1965, INTRO MATH STATISTIC

[3] HEARN EW, 1977, ADV XRAY ANAL, V20, P273

[4] JOHNSON WS, 1969, PROJECTED RANGE STAT

[5] DEFORMATION OCCURRING DURING DEPOSITION OF POLYCRYSTALLINE-SILICON FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (05) : 681 - 684

[6] GRAIN-GROWTH MECHANISMS IN POLYSILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : 1791 - 1795

[7] SCHWUTTKE GH, 1975, EPITAXIAL GROWTH, P281

[8] The tension of metallic films deposited by electrolysis [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-CONTAINING PAPERS OF A MATHEMATICAL AND PHYSICAL CHARACTER, 1909, 82 (553) : 172 - 175

[9] The Deformation of Polycrystalline-Silicon Deposited on Oxide-Covered Single Crystal Silicon Substrates [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (11) : 1776 - 1780

[10] GENERATION OF DISLOCATIONS INDUCED BY CHEMICAL VAPOR-DEPOSITED SI3N4 FILMS ON SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (08) : 1097 - &

[1] BROTHERTON SD, 1973, ELECTROCHEMICAL SOC, P385

[2] BRUNK HD, 1965, INTRO MATH STATISTIC

[3] HEARN EW, 1977, ADV XRAY ANAL, V20, P273

[4] JOHNSON WS, 1969, PROJECTED RANGE STAT

[5] DEFORMATION OCCURRING DURING DEPOSITION OF POLYCRYSTALLINE-SILICON FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (05) : 681 - 684

[6] GRAIN-GROWTH MECHANISMS IN POLYSILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : 1791 - 1795

[7] SCHWUTTKE GH, 1975, EPITAXIAL GROWTH, P281

[8] The tension of metallic films deposited by electrolysis [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-CONTAINING PAPERS OF A MATHEMATICAL AND PHYSICAL CHARACTER, 1909, 82 (553) : 172 - 175

[9] The Deformation of Polycrystalline-Silicon Deposited on Oxide-Covered Single Crystal Silicon Substrates [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (11) : 1776 - 1780

[10] GENERATION OF DISLOCATIONS INDUCED BY CHEMICAL VAPOR-DEPOSITED SI3N4 FILMS ON SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (08) : 1097 - &