EFFECT OF VACANCIES ON ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS GALLIUM-ARSENIDE FILMS

被引：13

作者：

NARASIMHAN, KL ^{[1
]}

GUHA, S ^{[1
]}

机构：

[1] TATA INST FUNDAMENTAL RES, BOMBAY 5, INDIA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1974年 / 16卷 / 01期

关键词：

D O I：

10.1016/0022-3093(74)90076-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：143 / 147

页数：5

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PANKEY, T .

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[3] MODEL FOR EFFECT OF VOIDS ON OPTICAL AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON [J].

LEWIS, A .

SOLID STATE COMMUNICATIONS, 1973, 13 (05) :547-551

[4]

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[5] ELECTRONS IN DISORDERED STRUCTURES [J].

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ADVANCES IN PHYSICS, 1967, 16 (61) :49-+

[6]

MUNOZ E, 1970, APPL PHYS LETT, V16, P262, DOI 10.1063/1.1653188

[7]

PAUL W, 1973, 11 P INT C PHYS SEM, V1, P38

[8]

RICHARDS JL, 1964, SINGLE CRYSTAL FILMS, P241

[9]

SPEAR WE, 1973, 5 INT C AM LIQ SEM G

[10]

STUKE J, 1971, P INT C LOW MOBILITY, P193

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