PIEZO-OPTICAL EFFECTS IN SOLIDS BY SAMPLE ROTATION

[1] INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1966, 143 (02): : 636 - &

[2] CARDONA M, TO BE PUBLISHED

[3] CASELLA RC, TO BE PUBLISHED

[4] HIGH-SENSITIVITY PIEZOREFLECTIVITY [J]. PHYSICAL REVIEW LETTERS, 1965, 14 (26) : 1069 - +

[5] OBSERVATION OF PHONON ASSISTED INDIRECT TRANSITIONS BY STRESS MODULATED OPTICAL TRANSMISSION [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (06) : 239 - +

[6] DIRECT OBSERVATION OF PHONONS IN SILICON BY ELECTRIC-FIELD-MODULATED OPTICAL ABSORPTION [J]. PHYSICAL REVIEW LETTERS, 1965, 14 (06) : 178 - &

[7] POLARIZATION DEPENDENCE OF PIEZOREFLECTANCE IN SI AND GE [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (09) : 401 - &

[8] GERHARDT U, 1965, PHYS STATUS SOLIDI, V11, P801

[9] DEPENDENCE OF OPTICAL CONSTANTS OF SILICON ON UNIAXIAL STRESS [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (04) : 142 - &

[10] GRABNER L, 1966, B AM PHYS SOC, V11, P86

[1] INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1966, 143 (02): : 636 - &

[2] CARDONA M, TO BE PUBLISHED

[3] CASELLA RC, TO BE PUBLISHED

[4] HIGH-SENSITIVITY PIEZOREFLECTIVITY [J]. PHYSICAL REVIEW LETTERS, 1965, 14 (26) : 1069 - +

[5] OBSERVATION OF PHONON ASSISTED INDIRECT TRANSITIONS BY STRESS MODULATED OPTICAL TRANSMISSION [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (06) : 239 - +

[6] DIRECT OBSERVATION OF PHONONS IN SILICON BY ELECTRIC-FIELD-MODULATED OPTICAL ABSORPTION [J]. PHYSICAL REVIEW LETTERS, 1965, 14 (06) : 178 - &

[7] POLARIZATION DEPENDENCE OF PIEZOREFLECTANCE IN SI AND GE [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (09) : 401 - &

[8] GERHARDT U, 1965, PHYS STATUS SOLIDI, V11, P801

[9] DEPENDENCE OF OPTICAL CONSTANTS OF SILICON ON UNIAXIAL STRESS [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (04) : 142 - &

[10] GRABNER L, 1966, B AM PHYS SOC, V11, P86