CHARACTERIZATION OF SOLAR GRADE SILICON BY NEUTRON-ACTIVATION ANALYSIS

被引：18

作者：

REVEL, G ^{[1
]}

DESCHAMPS, N ^{[1
]}

DARDENNE, C ^{[1
]}

PASTOL, JL ^{[1
]}

HANIA, B ^{[1
]}

DINH, HN ^{[1
]}

机构：

[1] CTR ETUD CHIM MET,F-9440 VITRY SUR SEINE,FRANCE

来源：

JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY | 1984年 / 85卷 / 03期

关键词：

D O I：

10.1007/BF02164380

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：137 / 150

页数：14

共 24 条

[1] GROWTH OF POLYSILICON SHEETS BY THE RAD PROCESS [J].

BELOUET, C .

JOURNAL OF CRYSTAL GROWTH, 1980, 50 (01) :279-290

[2]

BLONDIAUX G, 1973, IEEE T NUCLEAR SCI, V30, P1619

[3]

DECORTE F, 1971, J RADIOANAL CHEM, V8, P277

[4]

DECORTE F, 1971, J RADIOANAL CHEM, V8, P287

[5] APPLICATION TO NEUTRON-ACTIVATION ANALYSIS TO INDUSTRIAL QUALITY-CONTROL OF SEMICONDUCTOR-MATERIALS [J].

DUBNACK, J ;

HANOLD, G .

ISOTOPENPRAXIS, 1979, 15 (12) :392-395

[6]

FABRE E, 1982, 4TH P EC PHOT SOL EN, P436

[7] INSTRUMENTAL NEUTRON-ACTIVATION ANALYSIS OF SEMICONDUCTOR GRADE SILICON [J].

FUJINAGA, K ;

KUDO, K .

JOURNAL OF RADIOANALYTICAL CHEMISTRY, 1979, 52 (02) :411-419

[8] APPLICATION OF INSTRUMENTAL NEUTRON-ACTIVATION ANALYSIS IN CZOCHRALSKI SILICON CRYSTAL-GROWTH [J].

FUJINAGA, K ;

KUDO, K .

JOURNAL OF RADIOANALYTICAL CHEMISTRY, 1981, 62 (1-2) :195-207

[9]

GEBAUHR W, 1964, Z ANAL CHEM, V200, P266

[10] CRYSTAL-GROWTH CONSIDERATIONS IN USE OF SOLAR GRADE SILICON [J].

HOPKINS, RH ;

SEIDENSTICKER, RG ;

RAICHOUDHURY, P ;

BLAIS, PD ;

MCCORMICK, JR .

JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) :493-498

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