ION CHANNELING STUDIES OF REGROWTH KINETICS OF DISORDERED SURFACE-LAYERS ON GRAPHITE

被引：33

作者：

VENKATESAN, T

ELMAN, BS

BRAUNSTEIN, G

DRESSELHAUS, MS

DRESSELHAUS, G

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] MIT,DEPT PHYS,CAMBRIDGE,MA 02139

[3] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

[4] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

[5] MIT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02139

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 11期

关键词：

D O I：

10.1063/1.333842

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3232 / 3240

页数：9

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[7]

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