学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
OPTIMUM DESIGN OF N+-N- DOUBLE-DIFFUSED DRAIN MOSFET TO REDUCE HOT-CARRIER EMISSION
被引:21
作者
:
KOYANAGI, M
论文数:
0
引用数:
0
h-index:
0
KOYANAGI, M
KANEKO, H
论文数:
0
引用数:
0
h-index:
0
KANEKO, H
SHIMIZU, S
论文数:
0
引用数:
0
h-index:
0
SHIMIZU, S
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1985年
/ 32卷
/ 03期
关键词
:
D O I
:
10.1109/T-ED.1985.21978
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:562 / 570
页数:9
相关论文
共 14 条
[11]
TAKEDA E, 1982, SEP S VLSI OIS, P40
[12]
ANALYTICAL MODELS OF THRESHOLD VOLTAGE AND BREAKDOWN VOLTAGE OF SHORT-CHANNEL MOSFETS DERIVED FROM 2-DIMENSIONAL ANALYSIS
TOYABE, T
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi, Ltd., Kokubunji
TOYABE, T
ASAI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi, Ltd., Kokubunji
ASAI, S
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 453
-
461
[13]
LOW-LEVEL AVALANCHE MULTIPLICATION IN IGFETS
TROUTMAN, RR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
TROUTMAN, RR
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1976,
23
(04)
: 419
-
425
[14]
YU HN, 1979, IEEE J SOLID-ST CIRC, V14, P240
←
1
2
→
共 14 条
[11]
TAKEDA E, 1982, SEP S VLSI OIS, P40
[12]
ANALYTICAL MODELS OF THRESHOLD VOLTAGE AND BREAKDOWN VOLTAGE OF SHORT-CHANNEL MOSFETS DERIVED FROM 2-DIMENSIONAL ANALYSIS
TOYABE, T
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi, Ltd., Kokubunji
TOYABE, T
ASAI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi, Ltd., Kokubunji
ASAI, S
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 453
-
461
[13]
LOW-LEVEL AVALANCHE MULTIPLICATION IN IGFETS
TROUTMAN, RR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452
TROUTMAN, RR
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1976,
23
(04)
: 419
-
425
[14]
YU HN, 1979, IEEE J SOLID-ST CIRC, V14, P240
←
1
2
→