TEMPERATURE-DEPENDENCE OF PHOTOTHERMAL DIVERGENCE SIGNAL OF GAAS

被引:5
作者
HARAGUCHI, M
OKAMOTO, H
NUNOTANI, T
FUKUI, M
机构
[1] Department of Optical Science and Technology, The University of Tokushima, Tokushima, 770
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 6A期
关键词
PHOTOTHERMAL SPECTROSCOPY; PHOTOTHERMAL DIVERGENCE; PTD; GAAS; THERMAL CONDUCTIVITY;
D O I
10.1143/JJAP.34.3280
中图分类号
O59 [应用物理学];
学科分类号
摘要
We measured the temperature dependence of the photothermal signal intensity for undoped and doped GaAs samples using the photothermal divergence method proposed by Saito et al. [Appl. Opt. 31 (1992) 2047]. The temperature dependence of signal intensity and cutoff frequency of the signal agreed with a theoretical prediction and enabled determination of the temperature dependence of the thermal conductivity of the samples.
引用
收藏
页码:3280 / 3283
页数:4
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