CHEMICAL ACTIVITY OF THE C=C DOUBLE-BOND ON SILICON SURFACES

被引：79

作者：

BOZACK, MJ

TAYLOR, PA

CHOYKE, WJ

YATES, JT

机构：

[1] UNIV PITTSBURGH,DEPT PHYS,PITTSBURGH,PA 15260

[2] WESTINGHOUSE ELECT CORP,CTR RES & DEV,PITTSBURGH,PA 15222

来源：

SURFACE SCIENCE | 1986年 / 177卷 / 01期

关键词：

D O I：

10.1016/0039-6028(86)90252-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：L933 / L937

页数：5

相关论文

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[1] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON
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BECKER, GE
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SEIDEL, TE
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 907 - 913
[2] DEFECT-ENHANCED AND ELECTRON-ENHANCED CHEMISTRY AT SILICON SURFACES - REACTIVITY AND THERMAL-DESORPTION OF PROPYLENE ON SI(100)-(2X1)
BOZACK, MJ
CHOYKE, WJ
MUEHLHOFF, L
YATES, JT
[J]. SURFACE SCIENCE, 1986, 176 (03) : 547 - 566
[3] BOZACK MJ, J APPL PHYS
[4] DAVIS LE, 1972, HDB AUGER ELECTRON S
[5] KLIMESCH P, 1984, SURF SCI, V137, P79, DOI 10.1016/0039-6028(84)90677-0
[6] STROSCIO JA, UNPUB