SNSE SINGLE-CRYSTALS - SUBLIMATION GROWTH, DEVIATION FROM STOICHIOMETRY AND ELECTRICAL-PROPERTIES

被引：63

作者：

MAIER, H ^{[1
]}

DANIEL, DR ^{[1
]}

机构：

[1] AEG TELEFUNKEN,ENERGIE & IND TECH AG,FORSCHUNGSINST,FRANKFURT,FED REP GER

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1977年 / 6卷 / 06期

关键词：

D O I：

10.1007/BF02660344

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：693 / 704

页数：12

共 17 条

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[4]

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[6] SUBLIMATION GROWTH OF PSEUDOBINARY PB0.93SN0.07SE CRYSTALS WITH CONTROLLED CARRIER CONCENTRATION [J].

DANIEL, DR ;

MAIER, H ;

PREIER, H .

JOURNAL OF CRYSTAL GROWTH, 1977, 38 (01) :145-146

[7]

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[8]

HEINRICH H, 1974, INT C LATTICE DEFECT

[9]

HOORNSTRA J, 1959, J ELECTRON CONTROL, V7, P169

[10]

Karakhanova M.I., 1966, INORG MATER+, V2, P1012

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