LONG JOURNEY INTO TUNNELING

被引：23

作者：

ESAKI, L ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PROCEEDINGS OF THE IEEE | 1974年 / 62卷 / 06期

关键词：

D O I：

10.1109/PROC.1974.9522

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：825 / 831

页数：7

共 45 条

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ESAKI, L .

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[4] STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[5] GROWTH OF A GAAS-GAAIAS SUPERLATTICE [J].

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ESAKI, L ;

HOWARD, WE ;

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[6]

CHANG LL, TO BE PUBLISHED

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De Broglie L, 1925, ANN PHYS-NEW YORK, V3, P22, DOI [10.1051/anphys/192510030022, DOI 10.1051/ANPHYS/192510030022]

[10]

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